“Comparison of effective workfunction extraction methods using capacitance and current measurement techniques”, IEEE Elec. Dev. Lett.,27,7,p.598, 2006.

/카테고리: /작성자:

Download

다음의 항목 또한 추천합니다.
“Method for measuring capacitance”, U.S. patentNo. 6828630, 2009.06.16
“Characterization of ultra-thin dielectric using time domain reflectometry" presented at Int. Workshop on Dielectric Thin Films. (IWDTF)…
“Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, presented at…
“Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, presented at Int. Workshop on…
“Reliability characteristics of MoS2 FETs,” Int. Conf. on Solid State Device and Materials(SSDM), 2013.
“Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials, p.1331, 2011.