https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif00exelhttps://gistexel.com/wp-content/uploads/2014/08/logo_exel.gifexel2014-08-29 15:50:382014-08-29 15:52:24 “Co-optimization of Metal Gate/High-k Stack to Achieve High-Field Mobility > 90% of SiO2 Universal with EOT = ~1 nm”, IEEE Elec. Dev. Lett. 27, p.185, 2006.