“A novel bias temperature instability characterization methodology for high-k MOSFETs”, IEEE Elec. Dev. Lett., 27, p.849, 2006. 2014년 8월 29일/카테고리: Journals /작성자: exelDownload https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif 0 0 exel https://gistexel.com/wp-content/uploads/2014/08/logo_exel.gif exel2014-08-29 16:38:572014-08-29 16:39:10"A novel bias temperature instability characterization methodology for high-k MOSFETs", IEEE Elec. Dev. Lett., 27, p.849, 2006.
