G. Bersuker, B. H. Lee and H. Huff, “Novel dielectric Materials for Future transistor Generations”, Int. J. of High speed electronics and systems, v.16, n.1,  p.221-239, (2006)
H.N. Alshareef, K. Choi, H.C. Wen, H. F. Luan, H.R. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R.Jammy, S. Aguirre-Tostado, B. E. Gnade, and R. M. Wallace "Composition dependence of the work function of Ta1-xAlxNy Metal Gates", Appl. Phys. Lett., 88, p.072108, (2006)
M. S. Rahman, H. Park, M. Chang, D. Lee, B. H. Lee and H. Hwang “Enhanced Reliability and Performance of High-k MOSFET by Two-Step Annealing”, Electrochem. Solid-State Lett. 9, G127, (2006)
P.Kirsch, M.A.Quevedo-Lopez, H.J. Li, Y. Senzaki, J.J. Peterson, S.C.Song, S.A.Krishnan, N. Moumen, J. Barnett, G. Bersuker, P.Y. Hung, B.H.Lee, T. Lafford, Q. Wang, D. Gay, J. G.Ekerdt, "Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility," J. Appl. Phys., 99(2), 023508 (2006).
S.C. Song, J. Sim, Z. Zhang, S. Bae, P. Kirsch, G. Bersuker, and B. H. Lee, "Morphology and Crystallization of Ultra Thin HfON (EOT≤1nm) with TiN Metal Gate: Impact on Electron Mobility", Electrochem. Solid-State Lett. 9, G77, (2006)
C.S. Park, N. Moumen, J. H. Sim, J. Barnnet, B. H. Lee, and G. Bersuker, “Performance of HfO2 Gate Stacks with in-situ Grown and O3 Chemical Interfacial Oxide Layers”, Appl. Phys. Lett. 87, p.253510, (2005)
M.S. Akbar, N.Moumen, J.Barnett, B. H. Lee, and J.C.Lee, “Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid(500:1) post deposition rinsing and its effect after high pressure H2 anneal”, Appl. Phys. Lett., 87, p.252903, (2005)
H. Luan, H. N. Alshareef, P. S. Lysaght, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi and B. H. Lee, “Evaluation of tantalum silicon alloy system as gate electrodes,” Appl. Phys. Lett. 87, p.212110, (2005)
H. R. Harris, R. Choi, J.H. Sim, C. Young, P. Majhi, B. H. Lee, G. Bersuker, “Electrical Observation of Deep Traps in High-k/Metal Gate Stack Transistors”, IEEE Elec. Dev. Lett., 26, p.839, (2005)
H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young and H. Hwang, “Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-k Gate Dielectric”, IEEE Elec. Dev. Lett., 26. p.725, (2005)
R. Choi, S. C. Song, C. D. Young, G. Bersuker, and B. H. Lee, “Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique”, App. Phys. Lett., 87, p.122901, (2005)
H.-C. Wen, P. Lysaght, M. Campin, B. Foran, G. Lian, Rusty Harris, H. Alshareef, K. Choi, H. Luan, C. Huffman, P. Majhi, B. H. Lee and D.L. Kwong, “Thermal response of Ru electrodes in contact with SiO2 and Hf based high-K gate dielectrics”, J. Appl. Phys. 98, p.043520, (2005)
K. Choi, P. Lysaght, H. Alshareef, C. Huffman, H.-C. Wen, R. Harris, H. Luan,P.-Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, B. H. Lee, “Growth mechanism of TiN film on dielectric films and the effects on the work function”, Thin Solid Films, 486, p.141, (2005)
P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B. H. Lee, and H. R. Huff, “ Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes”, Appl. Phys. Lett., 87, p.082903, (2005)
Z. Zhang, S.C. Song, C.Huffman, M. M. Hussain, J. Barnett, N.Moumen, H.N. Alshareef, P.Majhi, J.H. Sim, S.H. Bae, and B. H. Lee, “Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process”, J. Electrochem. and Solid-State Lett. 8, G271, (2005)
S.C.Song, B. H. Lee, Z.Zhang, S.H.Bae, K.Choi, P.Zeitzoff, “Impact of Deposition Method of Metal Gate on Characteristics of Gate-First MOSFET with Hf-Silicate”, Electrochemical and solid-state Lett., 8, G261, (2005)
C.D. Young, P. Zeitzoff, G.A. Brown, G.Bersuker, B. H. Lee, and J.R. Hauser, “Intrinsic mobility evaluation of high-k gate dielectric transistors using pulse Id-Vg”, IEEE Elec. Dev. Lett. 26 , p.586, (2005)
H.N. Alshareef, H.C. Wen, K. Choi, R. Harris, H. Luan, P. Lysaght, P. Majhi, M. El-Bouanani, V. Ukride, and B. H. Lee, “Modulation of the work function of silicon gate electrode using thin TaN interlayers”, Appl. Phys. Lett., 87, p.052109, (2005)
G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, “Mobility evaluation in transistors with charge-trapping gate dielectrics”, Appl. Phys. Lett. 87, p.042905, (2005)
J.H.Sim, S.C.Song, P.D.Kirsch, C.D.Young, R.Choi, D.L.kwong, B. H. Lee and G.Bersuker, “Effect of ALD HfO2 thickness on charge trapping and mobility”, Microelectronic Eng., 80, p.218, (2005)
B.H. Lee, R. Choi, J. Sim, S. Krishnan, J. Peterson, G.A. Brown and G.Bersuker, “Validity of Constant Voltage Stress Based Reliability Assessment of High-k Devices”, IEEE Trans. Dev. Mat. Reliability, v.5, p.20, (2005) (Invited)
J.H. Sim, B. H. Lee R. Choi, S.-C.Song, and G. Bersuker, “Hot Carrier Degradation of HfSiON Gate Dielectrics with TiN Electrode”, IEEE Trans. Dev. Mat. Reliability, v.5, p.177, (2005)
S.C. Song, Z. Zhang, and B. H. Lee, “Effects of Boron Diffusion in pMOSFETs With TiN-HfSiO Gate Stack”, IEEE Elec. Dev. Lett. 26, p.366, (2005)

C.Y. Kang, P. Lysaght, R. Choi, B. H. Lee, S.J. Rhee, C. H.Choi, M. S. Akbar, and J.C. Lee, “Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors”, Appl. Phys. Lett. 86, p.222966, (2005)

C. D. Young, G. Bersuker, Y. Zhao, J. J. Peterson, J. Barnett, G. A. Brown, J. H. Sim, R. Choi, B. H. Lee and P. M. Zeitzoff, "Probing stress effects in HfO2 gate stacks with time dependent measurements", Microelectronics and Reliability, vol. 45, No. 5-6, p. 806, (2005)
C.D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G.A. Brown, R.W. Murto and G. Bersuker, “Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices”, Jpn. J. of Appl. Phys., vol. 44, No. 4B, 2437, (2005)
B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and G. Brown, “Transient Charging and Relaxation in High-k Gate Dielectric and Their Implications”, Jpn. J. of Appl. Phys., Vol. 44, No. 4B, 2415, (2005)
J.H. Sim, R. Choi, B. H. Lee, C. Young and G. Bersuker, “Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode", Jpn. J. of Appl. Phys., 44, 4B, p.2420 (2005)
R. Choi, B. H. Lee, C.D. Young, J.H. Sim, and G. Bersuker, “Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric”, Jpn. J. of Appl. Phys., 44, 4B, p.2201, (2005)
J. Barnett, C.D. Young, N,Moumen, G.Bersuker, J.J.Peterson, G.A. Brown, B.H.Lee, H.R.Huff, "Enhanced surface preparation technique for the Si/high-k interface", Diffusion and Defect data pt.B: Solid state pheonomena, 103-104, pp.11-14, (2005).
M.S. Akbar, N. Moumen, J. Barnett, B. H. Lee e and J.C. Lee, “Mobility Improvement After HCl Post-Deposition Cleaning of High-k dielectric, A Potential Issue in Wet Etching of Dual Metal Gate Process Technology”, IEEE Elect. Dev. Lett., 26, p.163, (2005)
R. Choi, S.J. Rhee, B. H. Lee, J. C. Lee, and G. Bersuker, “Charge Trapping and Detrapping Characteristics in Hafnium Silicate Gate Stack Under Static and Dynamic Stress”, IEEE Elect. Dev. Lett., 26, p.197, (2005)
G. Bersuker, J. Barnett, N. Moumen, S. Stemmer, M. Agustin, B. Foran, C. D. Young, P. Lysaght, B. H. Lee, Peter M. Zeitzoff, and H. R. Huff, “Interfacial Layer-Induced Mobility Degradation in High-k Transistors”, Jpn. J. Appl. Phys., 43, p.7899, (2004)
G.Bersuker, J.H.Sim, C.D.Young, R.Choi, P.M.Zeitzoff, G.A.Brown, B. H. Lee, R.W.Murto, “Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics”, Microelectronics reliability, 44, p.1509, (2004)

J.J. Peterson, C. D. Young, J. Barnett, S. Gopalan, J. Gutt, C.H. Lee, H.J. Li, T.HH. Hou, Y . Kim, C. Lim, N. Chaudhary, N. Moumen, B. H. Lee, G. Bersuker, G. Brown, P. Zeitzoff, M. Gardner, R. Murto, and H.Huff, "Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks,” Electrochemical and Solid-State Letters, 7, No. 8, G164, (2004)

S. Zafar, B. H. Lee, and J. Stathis, “Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates”, IEEE Electron Dev. Lett., v.25, p153, (2004)
K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong and H. -S. P. Wong, “Strained Si CMOS (SS CMOS) technology: opportunities and challenges” Solid-State Electron. 47, 7, p.1133, (2003)
Y.J. Cho, N.V.Nguyen, C.A.Richter, J.R.Ehrstein, B. H. Lee, and Jack C.Lee, “Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties”, Appl. Phys. Lett. 80, p.1249, (2001)
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee , “Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application”, Appl. Phys. Lett. 77, p.3269, (2000)
W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee,"Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application,” Appl. Phys. Lett. 77, p.1704, (2000)
L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee, " Electrical Characteristics of Highly Reliable Ultrathin Hafnium Oxide Gate Dielectric”, IEEE Electron Dev. Lett., 21,p.181, (2000)
B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee, "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing”, Appl. Phys. Lett. 76, p.1926, (2000) (First journal paper on thin HfO2 gate dielectric, cited more than 750 times)
B. H. Lee, Y. Jeon, K. Zawadzki, W. Qi and J. C. Lee, "Effect of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon”, Appl. Phys. Lett. 74, p.3143, (1999)
G. Cha, B. H. Lee, K. W. Lee, G. J. Bae, W. D. Kim, J. H. Lee, I. K. Kim, K. C. Park, S. I. Lee and Y. B. Koh, "Design Considerations for Patterned Wafer Bonding,” Jpn. J. Appl. Phys., 36, p.1912-1916, (1997)
J.M. Leng, J.J. Sidorowich, Y.D. Yoon, J. Opsal, B. H. Lee, G. Cha, J. Moon, and S.I. Lee, "Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry,” J. Appl. Phys. 8, p.3570, (1997)