H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, “Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC,” Appl. Phys. Lett., 99, 082111 2011., Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.
S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee "Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments," Appl. Phys. Lett. 99, 083306, Aug. 2011.
C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask,” Nanotechnology, 22, p.295201, May. 2011.
K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang,“Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device ,” Nanotechnology, 22(25), p.254023, May. 2011.
Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee*, “Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics,” Appl. Phys. Lett., 98, 183508, 2011. Also, published in Virtual J. of Nanoscale Science and Technology, 23(20), May 23, 2011.
H.M. Kwon, I.S. Han, S.U.Park, J.D.Bok, Y.J. Jung, H.S. Shin, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, “Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer ,” Jpn. J. of Appl. Phys. 50(4), Part 2, 04DD02, Apr. 2011.
Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee, "A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks", Nanotechnology, 22, 045706, Jan. 2011.
B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications, " J. Nanoscience and Nanotechnology 11, 1, p.256-261, Jan. 2011.
W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W.Lee and H.D. Lee, "Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks", IEEE Electron Device Letters, 31, 11, p.1211-1214, Nov. 2010.
H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi, "Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal", J. Vac. Sci. Technol. B 28(6), Nov. 2010.
J.W.Lee, B.H.Lee, H.C.Shin, J.H.Lee, “Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs,” IEEE Elect. Dev. Lett., 31., 10, p.1086-1088, Oct. 2010.
C.D.Young, D.Heh, R.Choi, B.H.Lee, G.Bersuker, "The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics ," J. Semi. Tech. Sci. 10(2), pp.79-99. Jun. 2010.
J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee, “Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs,” IEEE Trans. on Elect. Dev., 57(4), p.913, Apr. 2010.
M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee, “Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness," J. Appl. Phys., 107(3), AN. 034504, Feb. 2010.
H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, and H. Hwang, “Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition,” Jpn. J. Appl. Phys. 48, p.116506 , Nov. 2009.
H.B.Park, C.S.Park, C.Y.Kang, S.C.Song, B.H.Lee, T.Y.Jang, T.W.Kim, J.K.Jeong, R.Choi, “Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric,” Appl. Phys. Lett., 95(19), AN.119113, Nov. 2009.
R.Choi, T.W. Kim, H.Park, B.H. Lee*, “Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric”, Jpn. J. Appl. Phys. 48, p.091404 , Sep. 2009.
C.Y.Kang, R. Choi, B.H. Lee, R.Jammy, “Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs ," J. of Semi. Tech. and Sci. 9(3), pp.166-173. Sep. 2009.
K.T. Lee, C.Y. Kang, M.S. Park, B.H. Lee, H.K.Park, H.Hwang, H.H.Tseng, R.Jammy, Y.H.Jeong, “A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress,” IEEE Electron Dev. Lett., 30(7), p.760, Jul. 2009.
C.D.Young, G.Bersuker, R.Choi, D. Heh, B.H. Lee, Y.Zhao, “Pulsed Id–Vg Methodology and Its Application toElectron-Trapping Characterization andDefect Density Profiling,” IEEE Trans. On Electron Device, 56(6), p.1322, Jun. 2009.
C.Y.Kang, P.Kirsch, B.H. Lee, H.H.Tseng, R.Jammy, “Reliability of La-Doped Hf-Based Dielectrics nMOSFETs,” IEEE Trans. Dev. Mat. Reliability, 9(2), p.171, Jun. 2009.
H.S.Choi, S.H.Hong, R.H.Baek, K.T.Lee, C.Y.Kang, R.Jammy, B.H. Lee, Y.H.Jeong, “Low Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric,” IEEE Electron Dev. Lett., 30(5), p.523, May. 2009.
B.H. Lee, C.Y.Kang, R.Choi, H.D.Lee, G.Bersuker, “Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics,” Appl. Phys. Lett., 94(16), p.162904, Apr. 2009.
W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R.Choi, S.C.Song, B.H. Lee, R.Jammy, Y.H. Jeong and H.-D. Lee, “Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON,” Microelectronics Eng. 86(3), p.268, Mar. 2009.
O.S. Yoo, J.Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs,“ Microelectronics Eng. 86(3), p.259, Mar. 2009.
C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee, “‘Smart” TDDB algorithm for investigating degradation in high-k gate dielectric stacks under constant voltage stress" Microelectronics Eng. 86(3), p.287, Mar. 2009.
I.S.Han, O.S.Yoo, W.H.Choi, H.M.Kwong, M.K.Na, C.Y.kang, G. Bersuker, B.H. Lee, Y.H.Jeong, H.D.Lee, R.Jammy, “Time-Dependent Dielectric Breakdown of La2O3-Doped High-k Dielectric/Metal Gate Stacked NMOSFETs” IEEE Electron Deve. Lett., 30(3), p.298, Mar. 2009.
H.B.Park, B.S.Ju, C.Y.Kang, C.Park, C.S.Park, B.H. Lee, T.W.Kim, B.S.Kim, R.Choi, “Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment,” Appl. Phys. Lett., 94, p.042911, Jan. 2009.
C.D. Young, J.W.Yang, K. Matthews, S. Suthram, M.M.Hussain, G. Bersuker, C. Smith, R. Harris, R.Choi, B.H.Lee, H.H.Tseng, “Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations,” J. Vac. Sci. and Tech. B 27(1), p.468, Jan. 2009.
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, R. Jammy, “New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs, “ IEEE Elect. Dev. Lett., 30(1), p.54-56, Jan. 2009.
H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal , “Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors,” Appl. Phys. Lett., 93. p.192115, Nov. 2008.
O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee, “Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate” Materials Science and Engineering B, 154, p.102-105, 2008.
J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim, “Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93, 161913, Oct. 2008.
K. Choi, H.C.Wen, G. Bersuker, H. Harris, B.H.Lee, “Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide,” Appl. Phys. Lett. 93, 133056, Oct. 2008.
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, “An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part I,” IEEE Tran. On Electron Dev. 55(9), p.2429, Sep. 2008.
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee, “An Accurate Capacitance-Voltage Measurement Method for Highly leaky Devices-Part II,” IEEE Tran. On Electron Dev. 55(9), p.2437, Sep. 2008.
J.M. Lee, H.K. Park, M. Hasan, M. Jo, M. Chang, B. H. Lee, C.S. Park, C.Y. Kang and H. Hwang, “Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient,” Appl. Phys. Lett. 92, p.263505, Jul. 2008.
K.T.Lee, C.Y. Kang, B.S. Ju, R. Choi, K.S.Min, O.S.Yoo, B.H.Lee, R. Jammy, J.C.Lee, H.D. Lee, Y.H. Jeong, “Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs,” IEEE Electron. Dev. Lett., 29, p.565, Jun. 2008.
C.Y.Kang, J.W. Yang, J.Oh, R.Choi, Y.J.Suh, H.C. Floresca, J. Kim, M Kim, B.H. Lee, H.H.. Tseng, R. Jammy, “Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs,” IEEE Electron. Dev. Lett., 29, p.487, May. 2008.
K.T.Lee, C.Y.Kang, O.S.Yoo, R.Choi, B.H.Lee, J.C.Lee, H.D.Lee and Y.H.Yoon, “PBTI-Associated High Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High-k Dielectrics,” IEEE Electron. Dev. Lett., 29, p.389, Apr. 2008.
P.Kirsch, P. Sivasubramani , J. Huang , C. Young , M. Quevedo-Lopez , H.-C. Wen , H. Al-Shareef , K. Choi , C.S. Park , K. Freeman , M. Hussain , G. Bersuker , H. R. Harris , P. Majhi , R. Choi , P.Lysaght , B.H. Lee , H.-H. Tseng , R. Jammy , T. Boescke , D. Lichtenwalner , J. Jur , A. Kingon, “Dipole Model Explaining High-k/Metal Gate Field Effect Transistor Threshold Voltage Tuning,” Appl. Phys. Lett. 92, 092901, Mar. 2008.
A. Neugroschel, G.Bersuker, R.Choi, and B.H.Lee, “Effect of the Interfacial SiO2 Layer in High-k HfO2 Gate Stacks on NBTI,” IEEE Tran. Dev. And Mat. Relia., p.47, Mar. 2008.
O. Sharia, G. Bersuker, B. H. Lee and A. Demkov, “Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface”, Phys. Rev. B, 77, p.1, 2008.
H. Park, R.Choi, B.H. Lee, G. Bersuker, H. Hwang, “Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor ,” Jpn. J. Appl. Phys., Part 1: 47 (1), pp. 136-138, 2008.
P.S. Lysaght, J.C. Woicik, M. A. Sahiner, B.H. Lee and R. Jammy, “Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature", J. of Non-Crystalline Solids, 354, p.399, 2008.
H.K. Park, M.S. Jo, H.J. Choi, M. Hasan, R. Choi, P. Kirsch, C.Y. Kang, B.H. Lee, T.W. Kim, T.H. Lee and H. Hwang, “The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices,” IEEE Elec. Dev. Lett., 29, p.54, Jan. 2008.
H.C. Wen, P. Majhi, K.Choi, C.S.Park, H.Alshareef, H.Rusty, H.Luan, H.Niimi, H.B.Park, G.Bersuker, P.Lysaght, D.L.Kwong, S.C.Song, B. H. Lee and R. Jammy, “Decoupling the Fermi level pinning effect and intrinsic limitations on p-type effective work function metal electrodes”, Microelectronic Engineering, 85, p.2, Jan. 2008.
Y.Y.Zhang, J.Oh, T.S Bae, Z.Zhong, S.G.Li, S.Y. Jung, K.Y.Park, G.W.Lee, J.S.Wang, P.Majhi, B.H.Lee, H.H. Tseng, Y.H. Jeong, H.D. Lee, “Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs,” Electrochemical and Solid-State Lett. 11(1), H1, 2008.
B.H.Lee, S.C.Song, R.Choi and P.Kirsch, “Metal Electrode/High-k Dielectric Gate Stack Technology for Power Management,” IEEE Trans. on Electron Device, 55, p.8, Jan. 2008. (Invited)
B. H. Lee, C.Y.Kang, S. Krishnan, P.Kirsch, D. Heh, C. Young, J.W. Yang, G. Bersuker, R.Choi, H.D.Lee, “Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate”, Appl. Phys. Lett. 91, p.243514, 2007.