189
K.Yu, J.M.Lee,J.Kim, G.Kim, H.Kang, B.Park, H.Y.Kahng, S. Kwon, S.C.Lee, B.H.Lee, J. Kim, H.I.Park, S.O. Kim, K.Lee, “Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes", Nano Letters, 14(12), p.7100-7106, (2014).
188
S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*, "Nitrogen-treated Memristive Device for Tunable Electronic Synapse", Semiconductor Science and Technology, 29, p.104006 (2014).
187
Y.S.Park, S.M.Kim, H.S.Jeong, C.G.Kang, J.S.Park, H.Song, R.Lee, N.S.Myoung, B.H.Lee, S.Seo, J.T.Kim, G.Y.Jung, “Palladium-decorated Hydrogen Gas Sensors Using Periodically Aligned Graphene Nanoribbons", ACS Applied Materials and Interfaces, 6(15), p.13293 (2014).
186
Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
185
M.H.Kwon, S .K.Kwon, W.I.Choi, C.Y.Kang, B.H.Lee, P.Kirsch, H.D.Lee *, "A Correlation Between Oxygen Vacancies and Reliability Characterisitcs in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor", IEEE Trans. Elect. Dev., 61(8), p.2619 (2014).
184
U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, “Quantiatively estimating defects in graphene devices using discharge current analysis method," Scientific Reports 4, 4886 (2014).
183
U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, “Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method,” Appl. Phys. Lett. 104, 151604 (2014).
182
S.G. Park, S.C. Lee, S. Jandhyala, M.W. Ha, J.S. Lee, L. Colombo, R. Wallace, B.H. Lee, J. Kim, "Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors,” IEEE Elect. Dev. Lett., 35, p. 277- 279, March (2014).
181
C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee*, “Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene,” Appl. Phys. Lett. 104, 161902 (2014).
180
J.W. Kang, Y.S. Choi, B.H. Kim, C.G.Kang, B.H. Lee, C. W. Tu and S.J. Park,"Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode," Appl. Phys. Lett. 104, 051120 (2014).
179
S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate”, Carbon, 68, p.791-797 (2014).
178
M.H. Choe, B.H.Lee, W.J. Park, J.W.Kang, S.H. Jeong , K.J. Cho , W.-K. Hong , B.H.Lee, K.H.Lee. S.J.Park. T.H.Lee, "Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors," Appl. Phys. Lett. 103, 223305 (2013).
177
J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device, 60(11), p.3683 (2013).
176
J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*, "Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs", IEEE Elect. Dev. Lett., 34(9), p.1133 (2013).
175
M. Son, J.G. Son,K.-J. Moon, B.H. Lee, J.-M. Myoung, M. S. Strano, M.-H. Ham*, and C.A. Ross, "Sub-10-nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography," Advanced Materials, 25, pp.4723-4728 (2013).
174
S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang, “Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device," Nanotechnology , 24, 384009 (2013). (Invited)
173
Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, “Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method,” Carbon, 60, p.453-460 (2013).
172
C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3”, Optics Express, 21(20), p.23391 (2013).
171
H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
170
C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).
169
S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang,"Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronics Engineering, 107, p.33-36, Jul. (2013).
168
W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).
167
H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.
166
Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs," Appl. Phys. Lett. 102(9), 093121 (2013).
165
C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology, 24, 115707, (2013). , Also selected as article of particular interest.
164
J.W.Yoon, W.Park, G.Y.Bae, Y.H.Kim, H.S.Jang, Y.J. Hyung, S.K.Lim, Y.H.Kahng, W.K.Hong, B.H.Lee, H.C.Ko , "Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes”, Small, 9(19), p.3295 (2013).
163
K.S. Min, C. Park,C.Y. Kang, C.S. Park, B.J. Park, Y.W. Kim, B.H. Lee, Jack C. Lee, G. Bersuker, P. Kirsch, R. Jammy, G.Y. Yeom, "Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate," Solid State Electronics, 86, p.75-78, (2013)
162
C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors", Carbon, 53, p.182-187 (2013).
161
S.K. Lee, C.G.Kang, Y.G.Lee, C.Cho, E.J.Park, H.J.Chung, S.Seo, H.D.Lee, B.H. Lee*, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices", Carbon, 50(11), p.2046, Sep. 2012.
160
S. Park, S. Jung, M. Siddik, M. Jo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, B.H. Lee and H. Hwang, "Self-formed Schottky Barrier Induced Selector-less RRAM for Cross-point Memory Applications,” Phys. Status Solidi RRL, 6(11), p.454-456, Nov. (2012).
159
M. Choe, W. Park, J.W.Kang, S.H. Jeong, W.K.Hong, B.H. Lee, S.J.Park, T.Lee, "Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors", Nanotechnology, 23, 485201 (2012).
158
U. Jung, Y.G.Lee, J.J. Kim, S.K.Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H.Lee*, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett., 101, 182106, Nov. (2012)
157
S. Park, J. Park, S. Kim, W. Lee, B.H. Lee, and H. Hwang, “Programmable Analog Circuits with Multi-level Memristive device,” Electronic Letters, 48(22), p.1415–1417, (2012).
156
W.T. Lee , J.B. Park , S.H. Kim , J. Woo , J/ Shin , G. Choi , S.S. Park ,D.S. Lee , E. Cha , B.H.Lee, and H. Hwang, "High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays," ACS Nano, 6 (9), pp 8166–8172 , Sep. (2012).
155
S.K.Lee, M.S.Jo, C.W.Sohn, C.Y.Kang, J.C.Lee, Y.H.Jeong, B.H.Lee*, "New insight into PBTI evaluation method for nMOSFETs with stacked high-k/IL gate dielectric," IEEE Elect. Dev. Lett., Sep. 2012
154
S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, and T. Lee, " Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes", Nanotechnology, 23, p.344013, Aug. 2012.
153
Y.Kim, Y.G.Lee, M.Kim, C.G. Kang, U.Jung,J.J.Kim, S.C.Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y.Lim, B.H.Lee*, "Capacitance analysis of highly leaky Al2O3 MIM capacitor using time domain reflectometry," IEEE Electron Dev. Lett., 33(9), p. 1303-1305, Jul. 2012.
152
M.H. Choe, C.-Y. Cho, J.-P. Shim, W.J. Park, S.K. Lim, W.-K. Hong, B.H. Lee, D.S. Lee, S.J. Park, and T. Lee, "Au Nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices", Appl. Phys. Lett. 101, p.031115, Jul. (2012)
151
S.Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters,B.H. Lee, H. Hwang, L. Pantisano, "A study of the leakage current in TiN/HfO2/TiN capacitors ," Microelectronic Engineering, v.95, p.71-73, Jul. 2012.
150
J.J. Kim, M. Cho, L.Pantisano,Y.G.Lee, U. Jung, T.Chiarella, M. Togo, N.Horiguchi, G.Groeseneken, B.H.Lee*, "Process dependent N/PBTI characteristics of TiN Gate finFET," IEEE Elect. Dev. Lett.,33(7), p.937, Jul. (2012)
149
S.C. Lee, G.Jo, S.J. Jang, W.Park, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.H.Lee, "Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes", Jpn. J. Appl. Phys. 51, p.02BK09 , Feb. (2012)
148
B.H.Lee, Y.G.Lee, U.J.Jung, Y.H.Kim, H.J. Hwang, J.J. Kim, C.G.Kang, "Issues with the Electrical Characterization of Graphene Devices," Carbon Letters, Vol. 13(1), Jan. 2012. (Invited)
147
K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong, “A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs,” Microelectronics Engineering, 88, p.3411, Dec. 2011
146
H.M. Kwon, W.H. Choi, I.S. Han, M.K. Na, S.U. Park, J.D. Bok, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs", Microelectronics Engioneering, 88, 3399-3403, Dec. (2011)
145
H.M. Kwon, W.H. Choi, I.S. Han, S.U. Park, B.S. Park, Y.Y. Zhang, C.Y. Kang, B.H.Lee, R. Jammy, H.D.Lee, "Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics", Microelectronics Engineering, 88, 3415-3418, Dec. 2011
144
S.S. Park, J.H. Shin, S. Cimino, S.J. Jung, J.M. Lee, S.H. Kim, J.B. Park, W.T. Lee, M.W. Son, B.H. Lee, L. Pantisano and H. Hwang, "Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications", IEEE Elect. Dev. Lett.,32(12), p.1665, Dec. (2011)
143
S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, “Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19),192110,Nov.,2011.
142
S.U.Park, H.M,Kwon, I.S. Han, Y.J. Jung, H.Y.Kwak, W.I. Choi, M.L. Ha, J.I. Lee, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, “Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2,” Jpn. J. of Appl. Phys. 50(10), Part 2 (2011)
141
C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett. 32(11), p.1591, Sep. 2011.
140
Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee, “Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions”, Organic Electronics 12, p.2144 , Sep. 2011.