239
S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee,” Advantages of a buried-gate structure for graphene field-effect transistor ,” in revision, Nanoscale, (2018).
238
S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, “Worst case degradation of FinFETs with High-k Dielectric/Metal Gate under Bipolar AC Stress," in preparation for IEEE Trans. on Electron Device  (2018).
237
K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, B.H. Lee*, “Ultrahigh responsivity photodetector (~70A/W) using ZnO top gate controlled graphene-silicon Schottky junction," in preparation for publication  (2018).
236
S.Y.Kim, Y.J.Kim, H.J.Hwang, M.W.Son, N. Revannanth, M.H.Ham, B.H.Lee*, “ Threshold voltage modulation of graphene-ZnO barristor using polymer doping of graphene,” In preparation for publication, (2018).
235
S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," in revision, Scientific Reports (2018).
234
S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In revision,  Jpn. J. Appl. Phys.  (2018).
233
H.J.Hwang, W.B.Yoo, B.H.Lee*, “Electrical performance of graphene-ZnO:N barristor on a flexible polyethylene naphthalate (PEN) film," in press, AIP Advances (2018).
232
T.J.Yoo, Y.J.Kim, S.K.Lee, C.G.Kang, K.E.Chang, H.J.Hwang, N. Revannath, B.H.Lee*, "Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts," on-line published, ACS Photonics (2018).
231
Y.J. Kim, S.M. KIm, S.W. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, "High-pressure and low-temperature oxidation of Al2O3 for performance enhancement of graphene field-effect-transistors ," On-line published, Nanotechnology (2018).
230
Y.J.Kim, W.J.Park, J.H.Yang, Y.H. Kim, B.H.Lee*, "Contact resistance reduction of WS2 MOSFETs with Ti contact contact using high-pressure hydrogen annealing," IEEE J. Elect. Dev. Soc. 6(1), p. 164-168 (2017).
229
M.W.Son, Y.Park, S.S.Chee, F.M.Auxilia, K.H.Kim, B.K.Lee, S.G.Lee, S.K.Kang, C.D.Lee, J.S.Lee, K.K.Kim, Y.H.Jang, B.H.Lee, G.Y.Jung, M.H.Ham, “Charge transfer in graphene/polymer interfaces for CO2 detection," on-line published, Nano Research (2017).
228
Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
227
J.S.Song, M.G.Lee, H.W.Heong, S.H.Seo, J.A.Yoo, T.L.Kim, J.M.Lee, H.S.No, D.H.Kim, S.Y.Heong, H.J.An, B.H.Lee, C.W.Bark, H.W.Park, H.W.Jang, S.H.Lee, “Template-engineered epitaxial BiVO4 photoanodes for efficient solar water splitting," J. Mat.Chem.A 5(35), pp. 18831-18838 (2017).
226
C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee*, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon 123, pp. 307-310(2017).
225
S.S.Chee, C.H.Oh, M.W.Son, G.C.Son, H.B.Jang, T.J.Yoo, S.M.Lee, W.K.Lee, J.Y.Hwang, H.Y.Choi, B.H.Lee, M.H.Ham, “Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment," Nanoscale (27) , pp.9333(2017).
224
J.Jia, J.Xu, J.H.Park, B.H.Lee, E.H.Hwang, S.J.Lee, “Multifunctional homogeneous lateral black phosphorus junction devices," Chemistry of Materials, 29(7), p.3413-3151 (2017).
223
J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).
222
H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale  9, p.2442 (2017).
221
Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
220
Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, “Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer,” on-line published, Scientific Reports, 2016.
219
N. Fujisawa, T.F. Zhang, B.H.Lee, K.H.Kim “A robust method for extracting the mechanical properties of thin films with rough surfaces by nanoindentation," J. of Materials Research  v.31 (23), p.3777 (2016).
218
A.K. Khan, B.,H.Lee*, " Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device," AIP Advances  6, p.096022 (2016).
217
Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering", Nano Letters . 16(9), p.5928 (2016)
216
B.J.Co, A.R.Kim, D.J.Kim,  H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim,  B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, “Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor," ACS Applied Materials and Interfaces 8, p.19635-19632 (2016).
215
Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer," on-line published, Physica Status Solidi-RRL (2016).
214
J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing," Nature communications 7, p.11477 (2016).
213
Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, “Origin of the channel width dependent field effect mobility of graphene field effect transistors ," Microelectronic Engineering, v.163, p. 55-59 (2016).
212
Y.H.Kim, S.C.Kang,  S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
211
S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene", Vacuum Magazine (2016).
210
H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong, “ Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using  Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor," ACS Applied Materials and Interfaces 8(11), pp. 7248-7256(2016).
209
A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, “ Alloyed 2D metal-semiconductor atomic layer junctions ," Nano Letters  16(3). pp.1890 (2016).
208
J.H.Yang,T.H. Ryu, Y. Lansac, Y.H. Jang, B.H.Lee*, “Shear stress induced enhancement of Piezoelectric properties of PVDF-TrFE thin film," Organic Electronics, 28, p.67-72 (2016).
207
J.S.Jang, M.W.Son, S.K.Chung, K.H.Kim, C.Cho,  B.H.Lee, M.H.Ham, “Low-temperature-grown continuous graphene films from liquid benzene by chemical vapor deposition at ambient pressure," Scientific Report, 5, p.17955 (2015).
206
W.J.Park, Y.H.Kim, U.J. Jung,  J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee*, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials, p.1500279 (2015).
205
B.J. Cho, J.W. Yoon, S.K. Lim, A.R. Kim, S.Y.Choi, D.H. Kim, K.H. Lee, B.H. Lee, H.C. Ko, M.G. Hahm, “Metal decoration effect on gas-sending properties of 2D hybrid structure on flexible substrate," Sensors, 15, 24093 -24913 (2015). (Invited)
204
B.H.Lee*, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, “그래핀 소자기술," The Mag. of the IEIE (2015). (invited)
203
B.J.Cho, J.W.Yoon, S.K.Lim, A.R.Kim, D.H.Kim, S.G.Park, J.D.Kwon, Y.J.Lee. K.H.Lee, B.H.Lee, H.C.Ko, M.G.Hahm, "Chemical sensing of 2D graphene/MoS2 heterostructure device," ACS Applied Materials and Interfaces 7, p.16775 (2015).
202
S. H. Lee, W. Park, B. H. Lee and W. B. Kim, "Patterned Catalyst Arrays of Pd/SnO2 Core-Shell Nanowires for Electrooxidation of Biomass-Derived Alcohols", J. Mater. Chem. A 3, 13492-13499 (2015).
201
U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee*, “Dipole-Induced Gate Leakage Reduction in Scaled MOSFETs with a Highly Doped Polysilicon/Nitrided Oxide Gate Stack,” Microelectronic Engineering, 142, p.1 (2015).
200
C.Cho, S.K.Lee, J.Noh, W.Park  S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee*, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters, 106(21), p.213107 (2015).
199
S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee*, "Graphene transfer in vacuum yielding a high quality interface," Carbon, 93, p.286-294 (2015).
198
S.Park, M.Chu, J.I.Kim, J.Noh, M.Jeon, B.H.Lee, B.Lee, H.Hwang and B.G.Lee, "Electronic system with memristive synapses for pattern recognition," Scientific Reports, 1, 10123 (2015).
197
J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee*, "Sensitivity improvement of graphene/Al2O3/PVDF-TrFE stacked touch device through Al seed assisted dielectric scaling,"  Microelectronics Engineering, 147, p.79-84 (2015).
196
C.K.Park, H.J.Kim, K.Y.Ko, K.K.Kim, B.H.Lee, J.H.Ahn, "The variation of the enhanced PL efficiency of Y2O3:Eu3+ phosphor films with the height to the ZrO2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography," Microelectronic Engineering, v.136, p.48-50, 2015.
195
M.Chu, B.H.Kim, S.S.Park, H.Hwang, M,Jeon, B.H.Lee, B.G.Lee, “Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron ", IEEE Industrial Electronics, 62(4), P.2410 (2015).
194
Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee*, "Extraction of Effective Mobility from nMOSFETs with Leaky Gate Dielectric using Time Domain Reflectometry,"  IEEE Trans. Elect. Dev., 62(4), P.1092 (2015).
193
Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee*, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale
192
U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)
191
B.J. Cho, M.G. Hahm, M.S. Choi, J.W. Yoon, A.R. Kim, Y.J. Lee, S.G. Park, J.D. Kwon, C.S. Kim, M.K. Song, Y.S. Jeong, K.S. Nam, S.C. Lee, T.J. Yoo, C.G. Kang, B.H. Lee, H.C. Ko, P. Ajayan, D.H. Kim, “ Charge-transfer-based Gas Sensing Using Atomic-layer MoS2”, Scientific Reports, 5, 8052 (2015)
190
B.J.Cho, Cho, A.R. Kim, Y.J. Park, J.W. Yoon, Y.J. Lee, S.C. Lee, T.J. Yoo, C.G. Kang, B.H. Lee, H.C. Ko, D.H. Kim, M.G. Hahm, “Bifuntional Sensing Characteristics of chemical vapor deposition synthesized Atomic-Layered MoS2,” on-line published, ACS Applied Materials and Interface, (2015)