구분 번호 제목
국제 56
J.H.Sim, B. H. Lee, R.Choi, K.Matthew, P.Zeitzoff, and G.Bersuker, “Hot carrier reliability of HfSiON PMOSFETs with Metal gate”, International symposium on the physical and failure analysis of integrated circuits (IPFA), p.157, (2004).
국제 55
V. Narayanan, C.Cabral, F.R. McFeely, A.C. Callegari, S.Zafar, P.C. Jamison, A.L.Steegen, M.Gribelyuk, E. Cartier, V. Ku, P.Nguyen, A.Vayshenker, Y. Li, B. H. Lee, S.Guha, E.Gousev, M. Copel, D. Neumayer, R. Jammy, M. Ieong, W. Haensch, G.Shahidi, “Dual Metal Gate CMOS Using CVD Metal Gate Electrode”, Proceedings of Electronic Material Conference, (2004), Invited.
국제 54
D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi, “Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode”, Electronic Materials Conference, (2004).
국제 53
R.Choi, B. H. Lee, J.H.Sim, G.Bersuker, L.Larson, J.C.Lee, “Relaxation of FN stress induced Vth shift in nMOSFETs with HfSiON and TiN gate”, Proc. of Device Research Conference, p.17, (2004).
국제 52
J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong , P. Tsui, and G. Bersuker, “Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate”, Proc. of Device Research Conference, (2004).
국제 51
S. Zafar, B. H. Lee, J. Stathis and T. Ning, “A Model for Negative Bias Temperature Instability (NBTI) in Oxide and High-k pFETs” Proc. of Symposium on VLSI Technology, p.208, (2004).
국제 50
D.-G. Park, Z.J. Luo, N. Edleman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B. H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchel, V. Ku, H. Kim, E. Duch, P. Kozlowski, C.D’Emic,V. Narayanan, A. Steegen, R. Wise, R. Jammy, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, Symposium on VLSI Technology, p.136, (2004).
국제 49
J. J. Peterson, G. A. Brown, K. Matthews, J. Gutt, S. Gopalan, H.J. Li, J. Barnett, N. Moumen, P. Majhi, N. Chaudhary, C. D. Young, B. Sassman, B. H. Lee, G. Bersuker, P. M. Zeitzoff, P. Lysaght, M. Gardner and H. R. Huff, “Towards 0.5 nm EOT Scaling of HfO2 / Metal Electrode Gate Stacks”, ECS Fall meeting, Honolulu, 2004. (Invited)
국제 48
B.H.Lee, J.H.Sim, R.Choi, K.Matthew, G.Bersuker, N.Moumen, J.Peterson and L.Larson, “Localized transient charging and it’s implication on the hot carrier reliability of HfSiON MOSFETs”, International Reliability Physics Symposium, p.691, (2004), Late news paper.
국제 47

G. Bersuker, J. Gutt, N. Chaudhary, N. Moumen, B. H. Lee, J. Barnett, S. Gopalan, J. Peterson, H.-J. Li, P. M. Zeitzoff, G.A. Brown, Y . Kim, C. D. Young, J. H. Sim, P. Lysaght, M. Gardner, R. W. Murto, and H. R. Huff, “Integration Issues of High-K Gate Stack: Process-Induced Charging”, International Reliability Physics Symposium, p.479, (2004), Invited.

국제 46
J. Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B. H. Lee, G. Bersuker, P. M. Zeitzoff, G.A. Brown, P. Lysaght, C. Young, R.W. Murto, and H. R. Huff, “Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface”, MRS spring meeting, San Francisco, (2004).
국제 45
G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff, “Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance”, MRS spring meeting, San Francisco, (2004).
국제 44
G.Bersuker, B. H. Lee and Howard Huff, “Novel High-K Gate Stacks for Future Transistor Generations”, Workshop on Future Electronics, (2004), Invited.
국제 43
R.W. Murto, M.I. Gardner, P. Majhi, N. Moumen, B. H. Lee, G.A. Brown, P. M. Zeitzoff, and H.R. Huff, “Progress Toward High-k and Metal Gate Solutions for CMOS”, Nano Material conference, (2004), Invited.
국제 42
S.A. Krishnan, Paul D. Kirsch, B. H. Lee, J.J. Peterson, H.J. Li, J. Gutt, “Comparison of ALD and MOCVD deposition processes for deposition of Hafnium Silicate”, Texas section of American Physical Society conference, (2004).
국제 41
H. Park, W. Rausch, H. Utomo, K. Matsumoto, H. Nii, S. Kawanaka, P. Fisher, S-H. Oh, J. Snare, W. Clark, A.C. Mocuta, J. Holt, R. Mo, T. Sato , D. Mocuta, B. H. Lee, O. Dokumaci, P. O’Neil, D. Brown, J. Suenaga, Y. Li, L. Brown , J. Nakos,K. Hathorn, P. Ronsheim, H. Kimura, B. Doris, G. Sudo, K. Scheer, S. Mittl, T. Wagner, T. Umebayashi , M. Tsukamoto,Y. Kohyama, J. Cheek, I. Yang, H. Kuroda, Y. Toyoshima , J. Pellerin , D. Schepis, Y. Li, P. Agnello and J. Welser, “High Performance CMOS Devices on SOI for 90 nm Technology Enhanced by RSD (Raised Source/Drain) and Thermal Cycle/Spacer Engineering”, Tech. Dig. of Int. Electron Device Meetings, (2003).
국제 40
K. Rim, B. H. Lee, A. Mocuta, K. Jenkins, S. Bedell, H. Chen, D. Sadana, M. Gribelyuk, J. Ott, K. Chan, L. Shi, J. Chu, D. Boyd, P. Mooney, P. O’Neil, and J. Welser, “Strained Si MOSFETs on SiGe-on-Insulator (SGOI) for High Performance CMOS Technology”. Ext. Abs. of SSDM, (2003), Invited.
국제 39
Callegari, P.Jamison, B. H. Lee, D.Neumayer, V.Narayanan, S.Zafar, E.Gusev, C.D’Emic, D.Lacey, M.Gribelyuk, C.Cabral, A.Steegen, V.Ku, R.Amos, Y.Li, P.Nguyen, F.McFeely, G.Singer, J.Cai, S.-H.Ku, Y.Y.Wang, C.Wajda, D.O’Meam, H.Shinriki, and T.Takahashi, “W/HfO2 gate stacks with Tinv~1.2nm and low charge trapping”, Ext. Abs. of SSDM, (2003).
국제 38
N. Moumen, J. Barnett, R.W. Murto, M. Gardner, B. H. Lee e, J.J. Peterson, G. Bersuker and H. R. Huff, “ Effect of surface preparation on high-k gate stack performance”, Proceedings of ECS symposium, (2003).
국제 37
B.H. Lee, A. Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A.Chakravarti, R.M.Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H.Kermel, M.Gribelyuk, A. Domenicucci, S.Narasimha, S.H. Ku, M. Ieong, I.Y.Yang, E. Leobandung, P. Agnello, W. Haensch, and J. Welser, “Performance enhancement on sub-70nm strained silic0on SOI MOSFETs on Ultra-thin Thermally Mixed Strained silicon/SiGe on Insulator(TM-SGOI) substrate with Raised S/D”, Tech Dig. of Int. Electron Device Meetings, p.946, (2002), Late news paper.
국제 36
K. Rim, E.P. Gusev, C. D’Emic, H. Chen, J. Chu, J. Ott, B. H. Lee, A. Mocuta, K. Chan, T. Kanarsky, D. Boyd, V. Mazzeo, M. Ieong, S.L. Cohen, H.-S. Wong, “Mobility Enhancement in Strained Si NMOSFETs with HfO2 Gate Dielectrics”, Tech. Dig. of VLSI Symposium, (2002).
국제 35
H. Park, D. Schepis, A.C. Mocuta, M. Khare, Y. Li, B. Doris, S. Shukla, T. Hughes, O. Dokumaci, S. Narasimha, S. Fung, J. Snare, B. H. Lee, J. Li, P. Ronsheim, A. Domenicucci, P. Varekamp, A. Ajmera, J. Sleight, P. O'Neil, E. Maciejewski, C. Lavoie, “Gate Postdoping to Decouple Implant/Anneal for Gate, Source/Drain, and Extension:Maximizing Polysilicon Gate Activation for 0.1 µm CMOS Technologies”, Tech. Dig. of VLSI Symposium, (2002).
국제 34
C.S. Kang, L.Kang, B. H. Lee, Y. Jeon, W. Qi, R. Nieh, K.Onishi, S. Gopalan, R. Choi, E. Dharmarajan, and J. C. Lee, "Effects of Hf and Zr implanted into Si substrates on the electrical properties of MOS devices”, AIP conference, (2001).
국제 33
K.Rim, R.Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, J. Chu, M. Hargrove, L. Huang, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. Mooney,P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong, and H-S. P. Wong, “Strained Si CMOS (SS CMOS) Technology: Opportunities and Challenges”, ULSI symposium, (2002).
국제 32
K.Onishi, L.Kang, R.Choi, E.Dharmarajan, S.Gopalan, Y.Jeon, C.Kang, B. H. Lee, R.Nieh, and J.C.Lee, “Dopant penetration effects on polysilicon gate HfO2 MOSFET”, Proceeding of VLSI Symposium, p.131, (2001).
국제 31
R. Choi, C.S.Kang, B. H. Lee, K.Onishi, R.Nieh, S.Gopalan, E.Dhamarajan, and J.C.Lee, “High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN eldectrode and nitridation surface preparation”, Proceeding of Symposium VLSI Technology, p.15, (2001), Highlight session paper.
국제 30
J.C. Lee, R. Nieh, B. H. Lee, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, S. Gopalan, C.S. Kang, and R. Choi, “High-K Gate Dielectrics: ZrO2, HfO2, and Their Silicates”, ECS symposium on Gate Stacks for Nanoscale CMOS I, (2001), Invited.
국제 29
B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y.Jeon, W. Qi, C. Kang, and J. C. Lee, “Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)”, Tech Dig. of Int. Electron Device Meetings, p.61, (2000).
국제 28
L. Kang, K. Onishi, Y.Jeon, B. H. Lee, C.S> Kang; W.-J. Qi, R. Nieh, S. Gopalan; R. Choi, Jack C. Lee, " MOSFET Devices with Polysilicon Electrode on Single-Layer HfO2 High-K Dielectrics”, Tech. Dig. of International Electron Device Meetings, p.35, (2000).
국제 27
W. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, V. Kaushik, B.-Y. Neuyen, L. Prabhu, K. Eisenbeiser, J. Finder, and J. C. Lee, "Performance of MOSFETs with ultrathin ZrO2 and Zr silicate gate dieletrics”, Proc. of Symposium on VLSI technology, (2000).
국제 26
L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W. Qi, R. Nieh, S. Gopalan, and J.C. Lee, "Single-layer thin HfO2 gate dieletric with n+-polysilicon gate”, Proc. of Symposium on VLSI technology, (2000).
국제 25
J. Leng, S. Li, J.L Opsal, D.E. Aspnes, B. H. Lee, J.C. Lee, “ Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high k dielectric film HfO2”, Proc. SPIE - Int. Soc. Opt. Eng. (USA), v.4099, p.228-34, (2000).
국제 24
R. Nieh, W. Qi, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, and J. C. Lee, "Processing effect and electrical characteristics of ZrO2 formed by RTP oxidation of Zr”, ECS spring meeting, Ontario, (2000).
국제 23
J.C. Lee, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, R. Nieh, W. Qi, and R. Choi, "Hafnium and Zirconium based High-k dielectrics”, MRS workshop on High-k gate dielectrics, New Orleans, (2000), Invited.
국제 22
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, S. Gopalan, and J. C. Lee, "Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon”, Proceedings of International Reliability Physics Symposium, (2000).
국제 21
J. Lee, B. H. Lee, W.Qi, R.Nieh, L.Kang, Y.Jeon, and K.Onishi, "ZrO2 , Zr-silicate, and HfO2 Gate Dielectrics”, the Paris Future Development Conference, Paris, Feb. 17, (2000), Invited.
국제 20
J. Leng, S.Li, J.Opsal, B. H. Lee, and J. C. Lee, "Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE)”, Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona, (2000).
국제 19
W.-J. Qi, B. H. Lee, R. Nieh, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee, “High-k dielectrics”, Proc. SPIE Int. Soc. Opt. Eng. 3881, 24, (1999).
국제 18
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Nagai, S. Banerjee, and J. C. Lee, "MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si”, Tech. Dig. of Int. Electron Device Meetings, (1999).
국제 17
B. H. Lee, L. Kang, W. Qi, R. Nieh, K. Onishi, and J. C. Lee, "Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications”, Tech. Dig. of Int. Electron Device Meetings, p.143, (1999).
국제 16
B. H. Lee, L. Kang, W. Qi, R. Nieh, Y. Jeon, and J. C. Lee, “Electrical characteristics of ultra-thin hafnium oxide gate dielectric”, Discussed at 30th IEEE SISC, (1999).
국제 15
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi and J.C. Lee, "Study on ZrO2 deposited on Si as an alternative gate dielectric material”, MRS Fall Meeting, (1999).
국제 14
W. Qi, K. Zawadzki, R. Nieh, Y. Jeon, B. H. Lee, A. Lucas, L. Kang, and J. Lee, "A study on Hysteresis Effect of Barrium Strontium Titanate Thin Films for Alternative Gate Dielectric Application", Proceedings of MRS Fall Meeting, (1999).
국제 13
L. Kang, B. H. Lee, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, and J. C. Lee "Highly reliable thin Hafnium oxide gate dielectric”, Proceedings of MRS Fall Meeting, (1999).
국제 12
R. Nieh, W.-J. Qi, Y. Jeon, B. H. Lee e, A. Lucas and J. C. Lee," Nitrogen implantation to suppress growth of interfacial oxide in MOCVD BST and sputtered BST films”, MRS spring meeting, (1999).
국제 11
Y. Jeon, B. H. Lee, K. Zawadzki, W.Qi, A. Lucas, R. Nieh and J. Lee, "Effect of Barrier layer on the Electrical and Reliability Characteristics of High-k gate dielectric films”, Tech. Dig. of Int. Electron Device Meetings, p.707, (1998).
국제 10
B. H. Lee, Y. Jeon, A. Lucas, M. Gilmer, M. Gardner, J. Fair and J. C. Lee, "Comparative study of TiO2 and Ta2O5 on JVD nitride as an alternative gate dielectrics”, Proceedings of 29th IEEE SISC, p.67, (1998).
국제 9
B.H. Lee, Y. Jeon, K. Zawadzki, W.-J. Qi, R. Nieh, A. Lucas and J. Lee, "Leakage characteristics of TiO2 films”, Proceedings of American Vacuum Society Symposium, Austin, (1998).
국제 8
K. Zawadzki, W.-J. Qi, Y. Jeon, B. H. Lee, A. Lucas, R. Nieh, and J. Lee, "Sputtered BST Thin Films for Alternative High K Gate Dielectrics”, Proceedings of American Vacuum Society Symposium, Austin, (1998).
국제 7
Y. Jeon, K. Zawadzki, B. H. Lee, V. Balu, and J.C. Lee, "Alternative Gate Dielectric with BST/TiO2(Barrier Layer) Stacked Structure”, MRS Symposium on Rapid thermal and Integrated processing VII, p.193, (1998).