구분 번호 제목
국제 156
S.C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, B. H. Lee, H. H. Tseng, “Non-planar MOSFETs with Tunable Threshold Voltage (Vt) using ALD High-k/Metal Gate Stack”, Proc. of ALD conference, (2006).
국제 155
G. Bersuker, C.S.park, J.Sim, C.Young, R.Choi, B.H.Lee, “Charge trapping effects in high-k transistors”, ECS Trans. 1, p.663, (2006).
국제 154
S.C.Song, Z.Zhang, S.H.Bae, P.Kirsch, R.Choi and B.H.Lee, “High performance metal gate CMOSFETs with aggressively sacled Hf-based high-k,” ECS Trans. 1, p.609, (2006).
국제 153
P.S.Lysaght, J.C.Woicik, B.Foran, J.Barnett, G. Bersuker, B.H.Lee, “ The influence of NH3 anneal on the crystallization kinectics of HfO2 gate dielectric films”, ECS Trans. 1, p.313, (2006).
국제 152
P.D.Kirwch, M.Quevedo-Lopez, S.A.Krishnan, S.C.Song, R.Choi, P.Majhi, Y.Senzaki, G.Bersuker, B.H.Lee, “Atomi layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility and Vth stability,” ECS Trans. 1, p.15, (2006).
국제 151
C. D. Young, R. Choi, D. Heh, A. Neugroschel, H. Park, C.Y. Kang, G.A. Brown, S.C. Song, B. H. Lee and G. Bersuker, “Assessment of Process-Induced Damage in High-κ Transistors”, Proc. of ICICDT, p.1, (2006).
국제 150
G. Thareja, S. J. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J. C. Lee, “Low Work-Function TaN-metal gate with Gadolinium Oxide Buffer Layer on Hf-based Dielectrics”, Proc. of DRC, (2006).
국제 149
H. Park, R. Choi, S. C. Song, M. Chang, C. D. Young, G. Bersuker, B. H. Lee, J.C. Lee and H. Hwang, “Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs”, Proc. of IRPS, p.200 , (2006).
국제 148
G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, J. Gavartin, A. Shluger, R. Choi, B. H. Lee, “Electron Trapping Processes in High-k Gate Dielectrics and Nature of Traps”, VLSI-TSA, (2006).
국제 147
P. D. Kirsch, M. A. Quevedo, G. Pante, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace and B. E. Gnade, “Relationship of HfO2 Materials Properties and Transistor Performance”, VLSI-TSA, (2006).
국제 146
C.D. Young, D. Heh, R. Choi, J.J. Peterson, J. Barnett, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Trap Generation in High-k Gate Stacks by Constant Voltage Stress due to constant voltage stress”, Proc. of VLSI-TSA, (2006).
국제 145
G. Bersuker, C. Young, R. Choi, P. Lysaght, B. H. Lee, “Electron Trapping in N Incorporated Hf-based Gate Stacks”, MRS spring meeting, (2006).
국제 144
H. R.Harris, S.Krishnan, H.C. Wen, H. Alshareef, A.Rao, P. Majhi, R. Choi, B. H. Lee, G. Bersuker and G. Brown, “Reliability Characteristics of Metal/High-κ PMOS with Top Interface Engineered Band Offset Dielectric (BOD)”, Proc. of IRPS, p.661, (2006).
국제 143
S. A. Krishnan, M.Quevedo, H.-J. Li, P.Kirsch, R.Choi, C. Young, J.Peterson, B. H. Lee, G.Bersuker an J.C. Lee, “Impact of nitrogen on PBTI characteristics of HfSiON/TiN Gate Stacks”, Proc. of IRPS, p.325, (2006).
국제 142
Z.Zhang, M.M. Hussain, S.H.Bae, S.C. Song, and B. H. Lee, “Impact of metal gate wet etch on device characteristics and reliability for dual metal gate high-k CMOSFETs”, Proc. of IRPS, p.388, (2006).
국제 141
C. Y. Kang, R. Choi, S. C. Song, C. D. Young, G. Bersuker, B. H. Lee and J. C. Lee, “Carrier Recombination in High-k Dielectrics and its Impact on Transient Charge Effects in High-k Devices”, Proc. of IRPS, p.657 , (2006).
국제 140
G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, B. H. Lee, “Intrinsic Threshold Voltage Instability of the HfO2 Gate Stack NMOS Transistors”, Proc. of IRPS, p.179 , (2006).
국제 139
C.D. Young, D. Heh, S. Nadkarni, H.R. Harris, R. Choi, J.J. Peterson, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Electron Trap Generation Due to Constant Voltage Stress on High-κ Gate Stacks”, Proc. of IRPS, p.169 , (2006).
국제 138
O. Sharia, A.A.Demkov, G.Bersuker and B. H. Lee e, “Internal dielectric interface: SiO2/HfO2”, the Bulletin of the American Physical Society, (2006).
국제 137
J. Barnett, M. Hussain, J. J. Peterson, P. Kirsch, S.C.Song, C.S.Park, G. Bersuker, B. H. Lee and H. R. Huff, “Surface Preparation Techniques Used for Fabricating High-κ/Metal Gate Device Structures”, ISTC, (2006), Invited.
국제 136
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. Peterson, B. H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, and T.P. Ma, “High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization”, Tech. Dig. of IEDM, p.437, (2005).
국제 135
G. Bersuker, C. S. Park, J. Barnett, P. Lysaght, P. Kirsch, B. H. Lee, P. Lenahan, J. Ryan, J. Greer, A. Korkin, “Modification of interfacial SiO2 layer in high-k gate stacks”, SISC, (2005).
국제 134
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. J. Peterson, B. H. Lee, “Enhanced Reliability In Ultra-Scaled HfSiON Gate Dielectrics Through Suppressed Crystallization”, SISC, (2005).
국제 133
H.N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P.Majhi, and B. H. Lee, “Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes”, SISC, (2005).
국제 132
R. Choi, B. H. Lee, K. Mathur, C.D. Young, G. Bersuker, Y. Zhao , “Fast relaxation behavior and its implication on the measurement in high-k gate dielectric”, SISC, (2005).
국제 131
M.S. Rahman, H. Park, M. Chang, B. H. Lee, R. Choi and H. Hwang, “Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2”, SISC, (2005).
국제 130
M. Chang, M. Jo, H. Park, M.S. Rahman and B. H. Lee, R. Choi, and H. Hwang, “Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient”, SISC, (2005).
국제 129
P. S. Lysaght, J. Barnett, B. Foran, M. Quevedo, P.Kirsch, G.Bersuker, M.Gardner, B. H. Lee and L. Larson, “Spectroscopic analysis of the process dependent microstructure of ultra-thin high-k gate dielectric film systems”, 5th International Symposium on Atomic Layer Characterization for New Materials and Devices, (2005).
국제 128
P. D. Kirsch, H.-J. Li, J. Peterson, M. Quevedoc, Y. Senzaki, N. Moumen, S. C. Song and B. H. Lee, “Material Characterization of TEMAHf and HfCl4 HfO2 ALD to Enable Dielectric Scaling, Improved Electron Mobility and Vth Stability”, AVS ALD symposium, (2005).
국제 127
K. Choi, P. Lysaght, H. Alshareef, H.-C. Wen, R. Harris, H. Luan, P. Majhi, Y. Senzaki, B. H. Lee, S. K. Lee, S.I. Lee, “The Effective Work Function of Plasma Injection-Atomic Layer Deposition (PI-ALD) Metal Nitride Electrodes on High-k Dielectric Materials,” AVS ALD symposium, 2005.
국제 126
C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress”, Proc. of Int. Integrated Rel. Workshop, p.78, (2005).
국제 125
S.A. Krishnan, M.A. Quevedo-Lopez1, R. Choi, P. Kirsch, C. Young, R. Harris, J. Peterson, H.J. Li, B. H. Lee and J.C. Lee, “ultra-thin ALD-HfSiON/TiN Gate Stacks”, Proc. of Int. Integrated Rel. Workshop, p.89, (2005).
국제 124
Z. Zhang, S.C. Song, K. Choi, J.H. Sim, P. Majhi, and B. H. Lee, “An Integrable Dual Metal Gate/High-k CMOS Solution for FD-SOI and MuGFET Technologies”, Proc. of IEEE SOI conf., (2005).
국제 123
C. Y. Kang, R. Choi, S. C. Song, B. S. Ju, M. M. Hussain, B. H. Lee, J-W. Yang, D. Pham, H-H Tseng, “Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics”, IEEE SOI Conference, (2006).
국제 122
B. H. Lee,, P. Kirsch, P. Majhi, S.C. Song, R. Choi and G. Bersuker , “Prospect of high-k/metal gate stack technology for future CMOS devices,” 5th int. Symp. on Physics and Chemistry of SiO2 and Si-SiO2 interface, ECS Meeting, (2005), Invited.
국제 121
B. H. Lee, R. Choi, S.C. Song, J.Sim, C.Young, G. Bersuker, and H.K. Park and H.Hwang, “Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics”, Ext. Abs. of Symp. on SSDM, (2005), Invited.
국제 120
S.A. Krishnan, M. Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young and J.C. Lee, “NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 119
R. Choi, B. H. Lee, H. K. Park, C.D. Young, J.H. Sim, S.C. Song and G. Bersuker, “A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 118
S.C.Song, S.H.Bae, J.H.Sim, G.Bersuker, Z.Zhang, P.Kirsch, P.Majhi, N.Moumen, P. Zeitzoff, and B. H. Lee, “Impacts of Si Concentration in Hf-silicate on Performance and Reliability of Metal Gate CMOSFET”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 117
H.K. Park, R. Choi, B. H. Lee, C.D. Young, M. Chang, J.C. Lee and H. Hwang, “Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).
국제 116
P.D. Kirsch, S.C.Song, J.H.Sim, S. Krishnan, J.Gutt, J. Peterson, H.-J Li, M. Quevedo-Lopez, C.D.Young, R.Choi, J.Barnett, N.Moumen, , K.S.Choi, , C.Huffman,P.Majhi, M.Gardner, G.Brown, G.Bersuker, B. H. Lee, “Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2”, Proc. of ESSDERC, (2005).
국제 115
K. Choi, H. Alshareef, P. Lysaght, H.-C. Wen, R. Harris, H. Luan, P. Majhi, and B. H. Lee, “Work function tuning by thickness variation of metal film and dielectric surface treatment”, Proc. of ESSDERC, (2005).
국제 114
H.R. Harris, H.C. Wen, K. Choi, H. Alshareef, H. Luan, Y. Senzaki, C.D. Young, S.C. Song, Z. Zhang, G. Bersuker, P. Majhi and B. H. Lee, “Demonstration of High Performance Transistors with PVD Metal Gate”, Proc. of ESSDERC, (2005).
국제 113
Y. Senzaki, J. Gutt, G. Brown, P. Kirsch, H. Alshareef, K. Choi, H. Wen, P. Majhi and B. H. Lee, “ALD of Advanced High-k dielectric and Metal Gate Stacks for MOS Devices”, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, p.69, (2005), Invited.
국제 112
P. S. Lysaght, H.-C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi and B. H. Lee, “Physical Characterization of Novel Metal Electrodes for Hf-based Transistors”, AIP Conf. Proc. 788, characterization and metrology for ULSI technology, p.136, (2005).
국제 111
S.H Bae, S.C. Song, B. H. Lee, “Impact of thickness of metal nitride (TiN) in Poly Si/TiN gate stack on electrical performance and reliability ”, Proceedings of EMC, (2005).
국제 110
Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, and B. H. Lee, “Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric”, Proc. of VLSI, p.50, (2005).
국제 109
H.C.Wen, H.N. Alshareef, H.Luan, K. Choi, P. Lysaght, H.R., Harris, C. Huffman, G.A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B. H. Lee, “Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications”, Proc. of VLSI, p.46, (2005).
국제 108
P. D. Kirsch, J.J. Peterson, H.-J. Li, J. Gutt, S. Krishnan, M. Quevedo-Lopez, B. H. Lee, N. Moumen, J. Barnett, P. Majhi, S.C. Song and C. Ramiller, “High-k Dielectric Process Development for Enhanced Electron Mobility in High Performance Field Effect Transistors”, ISTC, (2005), Invited.
국제 107
B. H. Lee,, G. Bersuker, N. Moumen, P. Majhi, P. Kirsch, S.C. Song and C. Ramiller, “Electrical Characterization Methodologies for Advanced Gate Stacks with Metal gate and High-k dielectrics”, International Semiconductor Technology Conference, (2005), Invited.