구분 번호 제목
국제 256
C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).
국제 255
C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, "Variability and Feasibility of CVD Graphene Interconnect", Proc. of VLSI-TSA, (2011).
국내 254
Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Chung, H. Yang, S. Seo and B.H. Lee "Short Pulse Characterization of Hysteric Characteristics of Graphene Field Effect Transistor", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 253
U.J. Jung, Y.G. Lee, J.J. Kim, I. Mejia, A. Salas-Villasenor, M. Quevedo-Lopez, J. Kim and B.H. Lee "A Study on the Electrical Characterization methods for CdS channel MOSFETs", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 252
S.K. Lee, H.J. Hwang, Y.G. Lee, J.J. Kim, C.G. Kang, C.Y. Kang and B.H. Lee, "Reduction of Unwanted External Noises of Low Frequency Noise (1/f noise) Measurement", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 251
C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, "Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 250
H.J.Hwang, C.H.Cho, C.G.Kang, S.K.Lim, S.Y.Lee, E.J.Paek, H.Hwang, B.H.Lee, "Top Gate Graphene Field Effect Transistor on MLG/4H-SiC Substrates," 18th Korean Conference on Semiconductors (KCS), (2011).
국제 249
Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).
국제 248
S.K. Lim, C.H.Cho, S.Y. Lee, H.J.Hwang, C.G. Kang, Y.G. Lee, J. Ahn, and B.H. Lee,"Study of the graphene transfer from graphitized SiC substrate", Ext. Abs. of SSDM, pp.591, (2010).
국제 247
B.H. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, "Feasibility of Mechanical Switch Device using a Graphite Electrode", IMRS, Cancun, (2010), Invited.
국제 246
B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited
국내 245
C.H.Cho, S.H.,Kim, S.K.Lim, S.Y.Lee, H.J.Hwang, H.Hwang, B.H.Lee, "Carbon condensation and Germanium sublimation in GeC films by pulse laser annealing", 17th Korean Conference on Semiconductors (KCS), (2010).
국내 244
H.J.Hwang, S.K.Lim, S.Y.Lee, C.H.Cho, B.H.Lee, "Simplified analytic model for the scaling limit of nano electro mechanical switch devices", 17th Korean Conference on Semiconductors (KCS), (2010).
국제 243
B.H.Lee, “Extreme Low power Technology inspired by Biological Systems”, Semicon Korea, (2010), Invited
국제 242
K.S.Min, C.Y.Kang, C.Park, C.S.Park, B.J.Park, J.B. Park, M.Hussain, J.C.Lee, B.H.Lee, P.Kirsch, H.H. Tseng, R.Jammy, G.Y.Yeom, "A Novel Damage-Free High-k Etch Technique Using Neutral Beam Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs", Proc. of Int. Elect. Dev. Meeting, (2009).
국제 241
B.H.Lee, C.H.Cho, H.J.Hwang, S.K. Lim, S.Y. Lee, H.Hwang, "NEMS-CMOS hybrid technology and its applications", NANO Korea, (2009),  Invited.
국제 240
P.D.Kirsch, P.Sivasubramani, J. Huang, C.D.Young, M. A. Quevedo-Lopoez, H. C.Wen, H. Alshareef, K. choi, C.S.Park, K.Freeman, M.M.Hussain, G.Bersuker, H.R.Harris, P. Majhi, R.Choi, P. Lysaght, B.H.Lee, H.-H Tseng, R.Jammy, T. S. Boscke, D. J. Lichtenwalner, J.S.Jur, A. I. Kingon. "Dipole model explaining high-k/metal gate field transistor threshold voltage tuning", Electrochem. Soc. Transaction, 19(1), p.269, (2009), Invited.
국제 239
B.H.Lee, R.Choi, “Dielectric Breakdown Characteristics of Stacked High-k Dielectrics”, Electrochem. Soc. Transaction (ECS), San Francisco, 19(2), p.289, (2009), Invited.
국제 238
B.H.Lee, “Reliability characterization methods for MOSFETs with metal electrode/high-k dielectric stack", Proc. of ICICDT, (2009).
국제 237
B.H.Lee, “Exploratory NEMS-CMOS Hybrid Devices for Post CMOS era", Proc. of ISTC, Electrochem. Soc. Transaction, 18(1), p.857, (2009), Invited.
국제 236
G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, R. Jammy, “Breakdown in the metal/high-k gate stack: Identifying the “weak link" in the multilayer dielectric,” Proc. of Int. Electron Device Meeting, p.791, (2008).
국제 235
C.Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H.K. Park, G. Bersuker, B.H. Lee, H.S. Choi, K.T. Lee, Y-H. Jeong, J. Lichtenwalner, A.I. Kingon, H-H Tseng, R. Jammy, “The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions", Proc. of Int. Electron Device Meeting, p.115, (2008).
국제 234
W.-H. Choi, H.-M. Kwon*, I.-S. Han*, T.-G. Goo*, M.-K. Na*, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.-D. Lee, R. Jammy, "A Comprehensive and Comparative Study of Interface and Bulk Characteristics of nMOSETs with La-Incorporated High-k Dielectrics", Proc. of Int. Electron Device Meeting, p.111, (2008).
국제 233
J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy, "Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application", Proc. of Int. Electron Device Meeting, p.45, (2008).
국제 232
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, “Gate stack technology for nano-scale CMOS devices,”, Int. MRS, Chongging, China, (2008), Invited.
국제 231
K.T.Lee, C.Y.Kang, S.H.Hong, H.S.Choi, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S..Park, S.H..Sagong, S.W.Jung, H.K.Park, H.S.Hwang, B.H.Lee, Y.H.Jeong, “Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, (2008).
국제 230
C.Y. Kang, C.S.Park, H.K.Park, S.C.Song, .R.Choi, B.H.Park, B.Woo, K.T.Lee, J.Lee, H.Hwang, G.Bersuker, B.H.Lee, H.H.Tseng, R.Jammy, "Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric", Ext. Abs. of Symp. On Solid State Device and Materials, p.22, (2008).
국제 229
B.H.Lee, G. Bersuker, D. Heh, H. Park, C.Y. Kang, C. Young, H. Tseng, “Reliability characterization of metal electrode/high-k dielectric stacks for 45nm node beyond ”, Proc. of IWDTF, Tokyo. Japan, (2008), invited.
국제 228
B.H.Lee, C.S. Park, P. Kirsch, J. Huang, P. Sivasubramani, C.Burham, D.Gilmer, C.Y.Kang, P.Lysaght, G.Bersuker, P.Majhi, R.Harris, H.Tseng and R.Jammy, “Gate stack technology for nano-scale CMOS devices,”, IWDTF, Tokyo. Japan, (2008), Invited.
국제 227
J. Huang, P.D. Kirsch, J. Oh, S.H. Lee, J. Price, P. Majhi, H.R. Harris, D.C. Gilmer, D.Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C.S. Park, Y.N. Tan, N. Goel, C. Park, P.Y. Hung, P. Lysaght, K.J. Choi, B.J. Cho, H.-H. Tseng, B.H. Lee, R. Jammy, “Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable Sub-1nm EOT", Proc. Of Symp. On VLSI Technology, p.92, (2008).
국제 226
W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy, "The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate", Proc. Of Symp. On VLSI Technology, p.56, (2008).
국제 225
C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy, "Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics", Proc. of Int. Rel. Phys. Symp., (2008).
국제 224
J.-W. Yang, H.R.Harris, C.Y. Kang, C.D. Young, K.T. Lee, H.D. Lee, G. Bersuker, B.H. Lee, H.-H. Tseng, R. Jammy, “New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs”, Proc. of Int. Rel. Phys. Symp., (2008).
국제 223
K.T. Lee, C.Y. Kang, O.S. Yoo, C.D. Young, G. Bersuker, B.H. Lee, H.-D. Lee, Y.-H. Jeong, “A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain,” Proc. of IRPS, (2008).
국제 222
K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, G.Y. Yeom,, “Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0 nm) in metal gate/high-k dielectric CMOSFETs,” Proc. of IRPS, (2008).
국제 221
Y. N. Tan, H. C. Wen, C. Park, D. C. Gilmer, C. D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P. D. Kirsch, B. H. Lee, H. H. Tseng and R. Jammy, “Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance”, Proc. of VLSI-TSA, (2008).
국제 220
J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy "Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs", Proc. of VLSI-TSA, (2008).
국제 219
C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy, “Achieving Low Vt <-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications”, Proc. of VLSI-TSA, (2008).
국제 218
P. S. Lysaght, J. C. Woicik, M. A. Sahiner, P. D. Kirsch, G. Bersuker, B.-H. Lee and R. Jammy, “Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit,” Proc. of VLSI-TSA, (2008).
국제 217
O.S. Yoo, J.W. Oh, K.S. Min, C.Y. Kang, K.-T. Lee, M.K. Na, S.C. Song, R. Choi, B. H. Lee e, P. Majhi, H-H Tseng and H.-D. Lee, “Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 216
Y. N. Tan, C. D. Young, D. Heh, C. Park , P. Sivasubramani, J. Huang, D. C. Gilmer, K. J. Choi, J. Kim, M. J. Kim, P. Majhi, R. Choi, P. D. Kirsch, B. H. Lee, H. H Tseng, R. Jammy, “Improved Flash Memory Program and Erase Window with TiO2 Charge Trap Layer and High Temperature Dopant Activation Anneal,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 215
H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sung, S. C. Song, R. Choi, H. Adhikari, S. Suthram, B. H. Lee, H. -H. Tseng, R. Jammy, “Flexible, simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP”,Tech. Dig. of IEDM, p.57, (2007).
국제 214
S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, “Mechanism of Vfb roll-off in High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function ”, Tech. Dig. of IEDM, p.337, (2007).
국제 213
P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, “Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, Tech. Dig. of IEDM, p.543, (2007).
국제 212
K. T. Lee, C. Y. Kang, R.Choi, S. C. Song, B. H. Lee, O. S. Yoo, H.-D. Lee, Y.-H. Jeong, , “PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics”, discussed at SISC, (2007).
국제 211
J.-M. Lee, H. Park, M. Hasan, M.Jo, M. Chang, R. Choi, B. H. Lee, H. Hwang, “The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate,” discussed at SISC, (2007).
국제 210
M. M. Hussain, C. Smith,S. C. Song, B. H. Lee, R. Jammy, “Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 209
C. Young, G. Bersuker, J. Tun, R. Choi, D. Heh, and B. H. Lee e, ““Smart” TDDB Algorithm for Investigating Degradation in High-k Gate Dielectric Stacks under Constant Voltage Stress,” Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).
국제 208
C. S. Park, S. C. Song, G. Bersuker, H. B. Park, C. Burham, B. H. Lee, and R. Jammy, “Band Edge Effective Work Function of Ru Based Metal Gate Electrode for pMOSFET”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007), Invited.
국제 207
W.-H.Choi, I.-S. Han, H.-M. Kwon, T.-G. Goo, M.-K. Na, H.-S. Joo, O.-S. Yoo, G-W Lee, C. Y. Kang, R. Choi, S.C. Song, B. H. Lee, R. Jammy, Y.-H. Jeong and H.-D. Lee, “A Comparative Study of NMOSFETs with HfLaSiON and HfLaON”, Proc. of 4th Int. Symp. on Adv. Gate Stack Tech., (2007).